Nanoscale transfer-printed full-colour ultrahigh-resolution quantum dot LEDs | Nature

## Summary
Subjects Lasers, LEDs and light sources Quantum dots Abstract Full-colour ultrahigh-resolution quantum dot light-emitting diodes (URQLEDs) with high efficiency and stability are required for next-generation near-eye displays 1 , 2 , 3 . High-resolution, highly transparent, and efficient quantum dot light-emitting diodes. Ultra-high-resolution perovskite quantum dot light-emitting diodes. Article ADS CAS PubMed Google Scholar Download references Acknowledgements This work was financially supported by the National Key Research and Development Program of China (2022YFB3606500), National Natural Science Foundation of China (52572156), National Science and Technology Major Project (2025ZD0615600) and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China (2021ZZ126).

## Article Content
Subjects
Lasers, LEDs and light sources
Quantum dots
Abstract
Full-colour ultrahigh-resolution quantum dot light-emitting diodes (URQLEDs) with high efficiency and stability are required for next-generation near-eye displays
1
,
2
,
3
. However, existing quantum dot (QD) patterning techniques struggle to simultaneously achieve submicrometre pixel sizes, full-colour integration and high device performance. Here we report a dual-action force dynamics (DAFD) strategy using a hard silicon template as a nanoimprinting stamp, combined with integral inverted transfer printing. This approach enables red–green–blue (RGB) full-colour QD pixel arrays with densities in the range 9,072–25,400 pixels per inch (PPI), maintaining high-fidelity pattern replication with a conservative transfer yield >99.9%. The method is compatible with both CdSe/ZnS and perovskite QDs on rigid and flexible substrates. Beyond patterning, we identify and address a previously underappreciated bottleneck in ultrahigh-resolution devices—electric-field non-uniformity arising from pixel microstructures. Matching the dielectric constant of the leakage-current-blocking layer to that of the QDs by means of TiO
2
nanoparticle incorporation yields a more uniform electric-field distribution, effectively suppressing edge effects and enhancing both efficiency and operational stability. Red URQLEDs at 12,700 PPI achieved a peak external quantum efficiency (EQE) of 26.1% and an operational lifetime
T
95
@1,000 cd m
−
2
of 65,190 h. Comparable enhancements in device performance were obtained for green and blue URQLEDs, with EQE improvements of 124% and 119%, respectively. RGB-pixelated white URQLEDs reached a peak EQE of 10.1%. By integrating these URQLEDs with complementary metal–oxide–semiconductor (CMOS) integrated circuits, we demonstrated solution-processed active-matrix URQLED animated displays.
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Fig. 1: Schematic illustration and DAFD of the NP–TP process for submicrometre RGB full-colour QD luminescent layers.
Fig. 2: Structural characterization of the NP–TP process and resulting pixel microstructures.
Fig. 3: Structure and optoelectronic properties of patterned RGB QLED devices without a PVA barrier layer, with a PVA barrier layer and with a dielectric-constant-optimized PVA barrier layer.
Fig. 4: Simulated electric-field distribution in pixel microholes under applied bias.
Fig. 5: Optoelectronic performance and active-matrix drive demonstration of patterned RGB QD devices.
Data availability
The data supporting the findings of this study are available in the article and its
Supplementary Information
.
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## Expert Analysis

### Merits
- Article ADS CAS PubMed Google Scholar Download references Acknowledgements This work was financially supported by the National Key Research and Development Program of China (2022YFB3606500), National Natural Science Foundation of China (52572156), National Science and Technology Major Project (2025ZD0615600) and Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China (2021ZZ126).
- Author information Authors and Affiliations Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, People’s Republic of China Lihua Lin, Jie Wang, Hailong Hu, Haolin Luo, Yanbin Liu, Xingjie Yang, Jingnan Su, De’er Li, Zhongwei Xu, Chengyu Luo, Tailiang Guo & Fushan Li Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, People’s Republic of China Lihua Lin, Hailong Hu, Yanbin Liu, Yongshen Yu, Tailiang Guo & Fushan Li Authors Lihua Lin View author publications Search author on: PubMed Google Scholar Jie Wang View author publications Search author on: PubMed Google Scholar Hailong Hu View author publications Search author on: PubMed Google Scholar Haolin Luo View author publications Search author on: PubMed Google Scholar Yanbin Liu View author publications Search author on: PubMed Google Scholar Xingjie Yang View author publications Search author on: PubMed Google Scholar Jingnan Su View author publications Search author on: PubMed Google Scholar De’er Li View author publications Search author on: PubMed Google Scholar Zhongwei Xu View author publications Search author on: PubMed Google Scholar Chengyu Luo View author publications Search author on: PubMed Google Scholar Yongshen Yu View author publications Search author on: PubMed Google Scholar Tailiang Guo View author publications Search author on: PubMed Google Scholar Fushan Li View author publications Search author on: PubMed Google Scholar Contributions L.L. and F.L. conceived the core strategy of the patterning method and designed the experiment.

### Areas for Consideration
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### Implications
- Go to natureasia.com Buy this article Purchase on SpringerLink Instant access to the full article PDF. 39,95 € Prices may be subject to local taxes which are calculated during checkout Fig. 1: Schematic illustration and DAFD of the NP–TP process for submicrometre RGB full-colour QD luminescent layers.
- Mini-LED, micro-LED and OLED displays: present status and future perspectives.

### Expert Commentary
This article covers google, scholar, article topics. Notable strengths include discussion of google. Readability: Flesch-Kincaid grade 0.0. Word count: 2176.